TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 5 Pin |
Case/Package | DFN |
Drain to Source Resistance (on) (Rds) | 2.00 mΩ |
Polarity | N-Channel |
Power Dissipation | 2.35 W |
Drain to Source Voltage (Vds) | 30.0 V |
Breakdown Voltage (Drain to Source) | 30.0 V |
Continuous Drain Current (Ids) | 191 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Listed by Manufacturer |
Packaging | Reel |
The NTMFS4833NT1G is a N-channel Power MOSFET offers 30V drain source voltage and 26A continuous drain current. It is suitable for CPU power delivery, DC-to-DC converters and low side switching applications.
● Low RDS (ON) to minimize conduction losses
● Low capacitance to minimize driver losses
● Optimized gate charge to minimize switching losses
● -55 to 150°C Operating junction temperature range
ON Semiconductor
9 Pages / 0.23 MByte
ON Semiconductor
5 Pages / 0.08 MByte
ON Semiconductor
7 Pages / 0.13 MByte
ON Semiconductor
2 Pages / 0.02 MByte
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