| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -3.30 A |
| Case/Package | SOT-363 |
| Drain to Source Resistance (on) (Rds) | 180 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 1.00 W |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 4.20 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The NTJS4151PT1G is a P-channel single Trench Power MOSFET offers -20V drain source voltage and -3.3A continuous drain current. It is suitable for use as high side load switches, cell phones, computing, digital cameras, MP3s and PDAs.
● Leading Trench technology for low RDS (ON) extending battery life
● Small outline (2 x 2 mm) for maximum circuit board utilization
● Gate diodes for ESD protection
● -55 to 150°C Operating junction temperature range
ON Semiconductor
5 Pages / 0.14 MByte
ON Semiconductor
5 Pages / 0.11 MByte
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