| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 250 mA |
| Case/Package | SOT-363 |
| Drain to Source Resistance (on) (Rds) | 1.50 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 272 mW |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 250 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The NTJD4001NT1G is a dual N-channel small signal MOSFET designed for Li-Ion battery supplied devices like cell phones, PDAs and DSC. It is suitable for low side load switch, buck converters and level shift applications.
● Low gate charge for fast switching
● ESD protected gate
ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
16 Pages / 0.34 MByte
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3 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.15 MByte
ON Semiconductor
MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 1Ω; ID 250mA; SOT-363; PD 272mW; VGS +/-20V; -55d
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