| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -3.00 A |
| Case/Package | SOT283 |
| Drain to Source Resistance (on) (Rds) | 200 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 1.10 W |
| Input Capacitance | 300 pF |
| Gate Charge | 6.00 nC |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 3.00 A, -2.20 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
Amplify electronic signals and switch between them with the help of ON Semiconductor"s NTHD4P02FT1G power MOSFET. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
6 Pages / 0.09 MByte
ON Semiconductor
Power MOSFET and Schottky Diode 20V, 2.1A, Single P-Channel w/ 1A Schottky Barrier Diode, ChipFET
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