TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | -2.60 A |
Case/Package | SOT-223 |
Drain to Source Resistance (on) (Rds) | 145 mΩ |
Polarity | P-Channel |
Power Dissipation | 1.00 W |
Input Capacitance | 492 pF |
Gate Charge | 14.3 nC |
Drain to Source Voltage (Vds) | 60.0 V, -60.0 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 2.60 A, 2.60 mA |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR), Cut Tape (CT) |
The NTF2955T1G is a P-channel Power MOSFET withstands high energy in avalanche and communication modes.
● ±20V Gate-source voltage
ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
9 Pages / 0.47 MByte
ON Semiconductor
9 Pages / 0.53 MByte
ON Semiconductor
1 Pages / 0.15 MByte
ON Semiconductor
Power MOSFET -60V -2.6A 170mOhm Single P-Channel SOT-223, SOT-223 (TO-261) 4 LEAD, 1000-REEL
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