| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -12.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 155 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 55.0 W |
| Drain to Source Voltage (Vds) | -60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 12.0 A, 12.0 mA |
| Rise Time | 45.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
● Avalanche energy specified
● IDSS and VDS (on) specified at elevated temperature
● ±20V Gate to source voltage
● 2.73°C/W Thermal resistance, junction to case
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Power MOSFET -60V -12A 180mOhm Single P-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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