| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -25.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 51.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 75.0 W |
| Drain to Source Voltage (Vds) | -30.0 V |
| Breakdown Voltage (Gate to Source) | -15.0 V to 15.0 V |
| Continuous Drain Current (Ids) | 25.0 A |
| Rise Time | 37.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast recovery diode.
● AEC-Q101 qualified
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