| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 20.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 27.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 74.0 W |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Rise Time | 137 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
The NTD20N03L27T4G is a N-channel logic level vertical general purpose Power MOSFET provides the best of design in a power package. Avalanche energy issues make this part is an ideal design. The drain-to-source diode has an ideal fast but soft recovery.
● Ultra-low RDS (ON), single base, advanced technology
● Diode is characterized for use in bridge circuits
● IDSS and VDS (ON) Specified at elevated temperatures
● High avalanche energy specified
● ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
● -55 to 175°C Operating temperature range
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