| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 60V |
| Continuous Collector Current | 2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Jump-start your electronic circuit design with this versatile PNP NSV60200LT1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
ON Semiconductor
5 Pages / 0.06 MByte
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