| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | DPAK |
| Halogen Free Status | Halogen Free |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 100V |
| Continuous Collector Current | 3A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
The versatility of this PNP NSV1C300ET4G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
0.08 MByte
ON Semiconductor
3A, 100V Low VCE(sat) PNP Transistor
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