SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
●This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
●contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
●Features
●•Small Compact Surface Mountable Package with J−Bend Leads
●•Rectangular Package for Automated Handling
●•Highly Stable Oxide Passivated Junction
●•Excellent Ability to Withstand Reverse Avalanche Energy Transients
●•Guard−Ring for Stress Protection
●•NRVBS Prefix for Automotive and Other Applications Requiring
●Unique Site and Control Change Requirements; AEC−Q101
●Qualified and PPAP Capable
●•These are Pb−Free Devices