TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | SOT-223 |
Polarity | PNP |
Breakdown Voltage (Collector to Emitter) | 40V |
Continuous Collector Current | 3A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
If your circuit"s specifications require a device that can handle high levels of voltage, ON Semiconductor"s PNP NJT4030PT3G general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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