| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 42.0 V |
| Current Rating | 20.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 42.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.30 W |
| Drain to Source Voltage (Vds) | 42.0 V |
| Breakdown Voltage (Drain to Source) | 42.0 V |
| Breakdown Voltage (Gate to Source) | -14.0 V to 14.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Contact |
| Packaging | Cut Tape (CT) |
This NID5003NT4G power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 2300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
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