| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
This fast-switching NGTB50N120FL2WG IGBT transistor from ON Semiconductor will be perfect in your circuit. Its maximum power dissipation is 535000 mW. It has a maximum collector emitter voltage of 1200 V. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This device is made with field stop ii|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
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