TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Halogen Free Status | Halogen Free |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
This powerful and secure NGTB30N135IHRWG IGBT transistor from ON Semiconductor will make sure your circuit works properly. Its maximum power dissipation is 394000 mW. It has a maximum collector emitter voltage of 1350 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
ON Semiconductor
10 Pages / 0.17 MByte
ON Semiconductor
2 Pages / 0.25 MByte
ON Semiconductor
4 Pages / 0.23 MByte
ON Semiconductor
Trans IGBT Chip N-CH 1350V 60A 394000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1350V 60A 394000mW 3Pin(3+Tab) TO-247 Tube
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