| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Halogen Free Status | Halogen Free |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The NGTB30N120IHSWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and field-stop (FS) Trench construction and provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
● Low saturation voltage using Trench with field-stop technology
● Low switching loss - Reduces system power dissipation
● Optimized for low case temperature in IH cooker application
● Low gate charge
● Low conduction loss
ON Semiconductor
8 Pages / 0.16 MByte
ON Semiconductor
2 Pages / 0.16 MByte
ON Semiconductor
Trans IGBT Chip N-CH 1200V 60A 560000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 60A 452000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 60A 384000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 60A 260000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 60A 468000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 60A 192000mW 3Pin(3+Tab) TO-247 Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
