| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Halogen Free Status | Halogen Free |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The NGTB15N120IHLWG is an Insulated Gate Bipolar Transistor features a robust and field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
● Low saturation voltage using Trench with field-stop technology
● Low switching loss - Reduces system power dissipation
● Optimized for low case temperature in IH cooker application
● Low gate charge
● Low conduction loss
● Reduces system power dissipation
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