| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package (SI) | SO-1 |
| Case/Package | SO-1 |
| Power Dissipation | 165 mW |
| Breakdown Voltage (Drain to Source) | 4.00 V |
| Continuous Drain Current (Ids) | 10.0 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
DESCRIPTION
●NEC"s NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE 3210S01 is housed in a low cost plastic package which is available in tape and reel.
●NEC"s stringent quality assurance and test procedures assure the highest reliability and performance.
●FEATURES
●• SUPER LOW NOISE FIGURE:
● 0.35 dB TYP at f = 12 GHz
●• HIGH ASSOCIATED GAIN:
● 13.5 dB TYP at f = 12 GHz
●• GATE LENGTH: LG ≤ 0.20 μm
●• GATE WIDTH: WG = 160 μm
California Eastern Laboratories
15 Pages / 0.36 MByte
California Eastern Laboratories
7 Pages / 0.21 MByte
California Eastern Laboratories
Trans JFET 4V 70mA 4Pin Case S01
California Eastern Laboratories
Trans JFET 4V 70mA AlGaAs 4Pin Case S01 T/R
California Eastern Laboratories
Trans JFET 4V 70mA AlGaAs 4Pin Case S01 T/R
Renesas Electronics
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
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