| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 7.10 A |
| Case/Package | SOT-223 |
| Drain to Source Resistance (on) (Rds) | 30.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3.00 W |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 7.20 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Cut Tape (CT) |
The NDT451AN is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. It is particularly suited for low voltage applications such as DC-to-DC conversion where fast switching, low in-line power loss and resistance to transients are needed.
● High density cell design for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
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