| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 3.50 A |
| Case/Package | SOT-223 |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3.00 W |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 4.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
The NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC converters, PWM motor controls and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
● High density cell design for extremely low RDS (ON)
● High power and current handling capability
● Low drive requirements allowing operation directly from logic drivers
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