| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -2.30 A |
| Case/Package | SO, SOIC |
| Drain to Source Resistance (on) (Rds) | 138 mΩ |
| Polarity | P-Channel, Dual P-Channel |
| Power Dissipation | 2.00 W |
| Drain to Source Voltage (Vds) | -60.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 2.30 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The NDS9948 is a dual P-channel MOSFET produced using PowerTrench® process. It has been optimized for applications requiring a wide range of gate drive voltage ratings (4.5 to 20V). The device is suitable for use with load switch and battery protection applications.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±20V Gate to source voltage
● 2A Continuous drain current
● 1.6A Pulsed drain current
Fairchild
6 Pages / 0.25 MByte
Fairchild
1 Pages / 0.06 MByte
Fairchild
1 Pages / 0.14 MByte
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