| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 280 mA |
| Case/Package | SOT-23 |
| Drain to Source Resistance (on) (Rds) | 1.20 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 mW |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 280 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Cut Tape (CT) |
The NDS7002A is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
● High density cell design for extremely low RDS (ON)
● High saturation current capability
● Voltage controlled small signal switch
● Rugged and reliable
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