| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -900 mA |
| Case/Package | TO-236-3, SC-59, SOT-23-3 |
| Drain to Source Resistance (on) (Rds) | 500 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Drain to Source Voltage (Vds) | -30.0 V |
| Breakdown Voltage (Drain to Source) | -30.0 V |
| Continuous Drain Current (Ids) | 900 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly suited for low voltage applications where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
● High density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
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FAIRCHILD SEMICONDUCTOR NDS352AP MOSFET Transistor, P Channel, 900mA, -30V, 0.25Ω, -10V, -1.7V
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