| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 1.20 A |
| Case/Package | SuperSOT |
| Drain to Source Resistance (on) (Rds) | 250 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 500 mW |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 1.20 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
The NDS351AN is an N-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is particularly suited for low voltage where fast switching and low in-line power loss are needed in a very small outline surface mount package.
● Ultra-Low gate charge
● High performance trench technology for extremely low RDS (ON)
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