| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 1.70 A |
| Case/Package | SOT-23/SC-59 |
| Drain to Source Resistance (on) (Rds) | 140 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 500 mW |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | 8.00 V |
| Continuous Drain Current (Ids) | 1.70 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Cut Tape (CT) |
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Industry standard outline SOT-23 surface mount package using poprietary SuperSTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.
Fairchild
7 Pages / 0.06 MByte
Fairchild
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1 Pages / 0.04 MByte
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N-Channel Logic Level Enhancement Mode Field Effect Transistor
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