| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -1.00 A |
| Case/Package | SOT-23 |
| Drain to Source Resistance (on) (Rds) | 300 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Drain to Source) | -20.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 1.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The NDS332P is a P-channel logic level enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications such as battery powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface-mount package.
● Very low level gate drive requirements allowing direct operation
● Proprietary package design using copper lead-frame for superior thermal and electrical capabilities
● High density cell design for extremely low RDS (ON)
● Exceptional ON-resistance and maximum DC current capability
Fairchild
7 Pages / 0.24 MByte
Fairchild
8 Pages / 0.09 MByte
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Fairchild
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild
FAIRCHILD SEMICONDUCTOR NDS332P MOSFET Transistor, P Channel, 1A, -20V, 300mohm, -4.5V, -600mV
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