TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 1.30 A |
Case/Package | SuperSOT |
Drain to Source Resistance (on) (Rds) | 210 mΩ |
Polarity | N-Channel |
Power Dissipation | 500 mW |
Drain to Source Voltage (Vds) | 20.0 V |
Breakdown Voltage (Drain to Source) | 20.0 V |
Breakdown Voltage (Gate to Source) | 8.00 V |
Continuous Drain Current (Ids) | 1.30 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR), Cut Tape (CT) |
The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
● High density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
Fairchild
7 Pages / 0.06 MByte
Fairchild
8 Pages / 0.09 MByte
Fairchild
1 Pages / 0.04 MByte
Fairchild
7 Pages / 0.06 MByte
Fairchild
1 Pages / 0.15 MByte
Fairchild
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild
FAIRCHILD SEMICONDUCTOR NDS331N MOSFET Transistor, N Channel, 1.3A, 20V, 0.11Ω, 4.5V, 700mV
Fairchild
MOSFET N-CH 20V 1.3A 3SSOT
Fairchild
Trans MOSFET N-CH 20V 1.3A 3Pin SuperSOT T/R
Fairchild
MOSFET N-Ch LL FET Enhancement Mode
ON Semiconductor
MOSFET N-CH 20V 1.3A 3SSOT
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.