| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -120 mA |
| Case/Package | SOT-23 |
| Drain to Source Resistance (on) (Rds) | 10.0 Ω |
| Polarity | P-Channel |
| Power Dissipation | 300 mW |
| Drain to Source Voltage (Vds) | -60.0 V |
| Breakdown Voltage (Drain to Source) | -60.0 V |
| Continuous Drain Current (Ids) | -120 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The NDS0610 is a P-channel enhancement-mode FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
● Voltage controlled p-channel small signal switch
● High density cell design for low RDS (ON)
● High saturation current
Fairchild
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Fairchild
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Fairchild
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1 Pages / 0.15 MByte
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