TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -20.0 V |
Current Rating | -24.0 A |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 75.0 mΩ |
Polarity | P-Channel |
Power Dissipation | 50.0 W |
Drain to Source Voltage (Vds) | -20.0 V |
Continuous Drain Current (Ids) | -24.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The NDP6020P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC converters, PWM motor controls and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
● Critical DC electrical parameters specified at elevated temperature
● Internal source drain diode can eliminate need for an external Zener diode transient suppressor
● High density cell design for extremely low RDS (ON)
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