| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Current Rating | 350 mA |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 1.00 Ω |
| Polarity | N-Channel, P-Channel, Dual N-Channel, Dual P-Channel |
| Power Dissipation | 960 mW |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 510 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
The NDC7001C is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage, low current, switching and power supply applications.
● High saturation current
● High density cell design for low RDS (ON)
● Design using copper lead-frame for superior thermal and electrical capabilities
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