| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -2.70 A |
| Case/Package | SSOT |
| Drain to Source Resistance (on) (Rds) | 140 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 1.60 W |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Drain to Source) | -20.0 V |
| Continuous Drain Current (Ids) | 2.70 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Tape |
General Description
●These P-Channel logic level enhancement mode power field effect transistors are produced using
●Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
●Features
●-2.7A, -20V. RDS(ON)= 0.14W@ VGS= -4.5V
● RDS(ON)= 0.2W@ VGS= -2.7V.
●Proprietary SuperSOT™-6 package design using copper lead frame for superior thermal and electrical capabilities.
●High density cell design for extremely low RDS(ON).
●Exceptional on-resistance and maximum DC current capability.
Fairchild
7 Pages / 0.07 MByte
Fairchild
7 Pages / 0.07 MByte
Fairchild
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Fairchild
MOSFET P-CH 20V 2.7A SSOT-6
ON Semiconductor
MOSFET P-CH 20V 2.7A SSOT-6
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