| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-252/D-PAK |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 60V |
| Continuous Drain Current (Ids) | 12A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
12 AMPERES 60 VOLTS RDS(on)= 180 mΩ
●This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
●• Avalanche Energy Specified
●• IDSS and VDS(on) Specified at Elevated Temperature
ON Semiconductor
12 Pages / 0.08 MByte
ON Semiconductor
12 Pages / 0.07 MByte
Fairchild
Power Field-Effect Transistor, 12A I(D), 60V, 0.18Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Fairchild
Power Field-Effect Transistor, 12A I(D), 60V, 0.15Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK Rail
Motorola
12A 60V 0.18Ω N-CH Si PMOS TO-252
Motorola
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15Ω
Motorola
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18Ω
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