RF Power Field Effect Transistor
●N- Channel Enhancement- Mode Lateral MOSFETs
●Designed primarily for pulsed wideband large- signal output and driver
●applications with frequencies up to 450 MHz. Devices are unmatched and are
●suitable for use in industrial, medical and scientific applications.
●• Typical CW Performance at 220 MHz: VDD= 50 Volts, IDQ= 900 mA,
● Pout= 300 Watts
● Power Gain ó 27 dB
● Drain Efficiency ó 68%
●• Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW Output Power
●Features
●• Integrated ESD Protection
●• Greater Negative Gate- Source Voltage Range for Improved Class C Operation
●• Excellent Thermal Stability
●• Facilitates Manual Gain Control, ALC and Modulation Techniques
●• 225°C Capable Plastic Package
●• RoHS Compliant