| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 1.00 A |
| Case/Package | TO-92 |
| Polarity | NPN, N-Channel |
| Power Dissipation | 1.00 W |
| Breakdown Voltage (Collector to Emitter) | 50.0 V |
| Continuous Collector Current | 1A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
Compared to other transistors, the NPN MPSW45AG Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@2mA@1A V. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 25000@200mA@5 V|15000@500mA@5V|4000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@2mA@1A V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 12 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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