The MOCD207M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
●Features
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● Closely Matched Current Transfer Ratios
● Minimum BVCEO of 70 V Guaranteed
● MOCD207M, MOCD208M
● Minimum BVCEO of 30 V Guaranteed
● MOCD211M, MOCD213M, MOCD217M
● Low LED Input Current Required for Easier Logic Interfacing
● MOCD217M
● Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing
● Safety and Regulatory Approvals:
● UL1577, 2,500 VACRMS for 1 Minute
● DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage
