| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 5.00 V |
| Case/Package | DIP |
| Input Voltage (DC) | 1.35 V |
| Output Voltage | 70.0 V (max) |
| Number of Circuits | 1 Circuit |
| Number of Channels | 1 Channel |
| Rise Time | 2.00 µs |
| Isolation Voltage | 5.30 kV |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Bulk |
DESCRIPTION
●The MOC811X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for improved noise immunity
●FEATURES
●• High isolation voltage 5300 VAC RMS—1 minute
●• High BVCEOminimum 70 Volts
●• Current transfer ratio in selected groups:
●MOC8111: 20% min.
●MOC8112: 50% min.
●MOC8113: 100% min.
●• Maximum switching time in saturation specified
●• Underwriters Laboratory (UL) recognized (File #E90700)
●• VDE recognized (File #94766)
●APPLICATIONS
●•Power Supply Regulators
●• Digital Logic Inputs
●• Microprocessor Inputs
●• Appliance Sensor Systems
●• Industrial Controls
Fairchild
10 Pages / 0.17 MByte
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