| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 160 V |
| Current Rating | 600 mA |
| Case/Package | SOT-23 |
| Polarity | NPN |
| Breakdown Voltage (Collector to Emitter) | 160V |
| Continuous Collector Current | 0.6A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
Design various electronic circuits with this versatile NPN MMBT5551LT3G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
6 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
6 Pages / 0.17 MByte
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