| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -40.0 V |
| Current Rating | -200 mA |
| Case/Package | SC-75 |
| Polarity | PNP, P-Channel |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | -40.0 V |
| Continuous Collector Current | 0.2A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
If your circuit"s specifications require a device that can handle high levels of voltage, ON Semiconductor"s PNP MMBT3906TT1G general purpose bipolar junction transistor is for you. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
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