| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -25.0 V |
| Case/Package | SOT-23 |
| Halogen Free Status | Halogen Free |
| Breakdown Voltage | -25.0 V |
| Polarity | N-Channel |
| Power Dissipation | 225 mW |
| Input Capacitance | 5.00 pF |
| Drain to Source Voltage (Vds) | 25.0 V |
| Breakdown Voltage (Gate to Source) | 25.0 V |
| Continuous Drain Current (Ids) | 10.0 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The MMBFJ309LT1G is a N-channel JFET designed for high frequency amplifiers and oscillators. The device offers interchangeable drain and source, space saving surface-mount package. The Low RDS (ON) provides higher efficiency and extends battery life.
● 25VDC Drain-source voltage
● 25VDC Gate-source voltage
● 10mA Gate current
ON Semiconductor
7 Pages / 0.29 MByte
ON Semiconductor
5 Pages / 0.2 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
5 Pages / 0.31 MByte
ON Semiconductor
1 Pages / 0.15 MByte
ON Semiconductor
ON SEMICONDUCTOR MMBFJ309LT1G JFET Transistor, JFET, -25V, 12mA, 30mA, -4V, SOT-23, JFET
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