TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 20.0 A |
Case/Package | TO-218 |
Polarity | NPN, N-Channel |
Power Dissipation | 160 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
Continuous Collector Current | 20A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The MJH6284G is a 100V Silicon NPN Bipolar Complementary Darlington Power Transistor designed for use as general purpose amplifiers, low frequency switching and motor control applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
● Rugged RBSOA characteristics
● Collector-base voltage (Vcbo = 100V)
● Emitter-base voltage (Vcbo = 5V)
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
20 Pages / 2.6 MByte
ON Semiconductor
2 Pages / 0.06 MByte
ON Semiconductor
5 Pages / 0.45 MByte
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