| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 400 V |
| Current Rating | 8.00 A |
| Case/Package | TO-220 |
| Polarity | NPN, N-Channel |
| Power Dissipation | 80.0 W |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| Continuous Collector Current | 8A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
The MJE13007G is a Silicon NPN Bipolar Power Transistor designed for high voltage and high speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
● SOA and switching applications
● Collector-base voltage (Vcbo = 700V)
● Emitter-base voltage (Vcbo = 9V)
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