| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 100V |
| Continuous Collector Current | 3A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP MJD32CT4-A general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 15000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
ST Microelectronics
13 Pages / 0.38 MByte
ST Microelectronics
Trans GP BJT PNP 100V 3A 15000mW 3Pin(2+Tab) TO-252 T/R
ON Semiconductor
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