The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.
●Features
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● Collector-Emitter Sustaining Voltage
●VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
● High DC Current Gain
●hFE = 40 (Min) @ IC= 200 mAdc
●hFE= 15 (Min) @ IC = 1.0 Adc
● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
● Straight Lead Version in Plastic Sleeves ("-1" Suffix)
● Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
● Low Collector-Emitter Saturation Voltage -
●VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
●VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
● High Current-Gain-Bandwith Product -
●fT = 40MHz (Min) @ IC = 100 mAdc
● Annular Construction for Low Leakage -
●ICBO = 100 nAdc @ Rated VCB
● NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
● These are PbFree Packages
