| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 2.00 A |
| Case/Package | TO-252 |
| Polarity | NPN, N-Channel |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The MJD112T4 is a NPN complementary power Darlington Transistor manufactured using Planar technology with "Base Island" layout. It has monolithic Darlington configuration with integrated anti-parallel collector-emitter diode.
● Good hFE linearity
● High fT frequency
ST Microelectronics
10 Pages / 0.37 MByte
ST Microelectronics
1 Pages / 0.13 MByte
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Micro Commercial Components
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