| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 120 V |
| Current Rating | 50.0 A |
| Case/Package | TO-3 |
| Polarity | NPN, N-Channel |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 120V |
| Continuous Collector Current | 50A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
The MJ11032G is a NPN Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications.
● High DC current gain
● Monolithic construction with built-in base-emitter shunt resistor
ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
4 Pages / 0.23 MByte
ON Semiconductor
4 Pages / 0.06 MByte
ON Semiconductor
1 Pages / 0.13 MByte
Multicomp
Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 300W, 50A, 1000 hFE
Semelab
SEMELAB MJ11032 Bipolar (BJT) Single Transistor, Darlington, NPN, 120V, 300W, 50A, 1000 hFE
ON Semiconductor
TO-204-2/TO-3-2 NPN 120V 50A
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