| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 120 V |
| Current Rating | 30.0 A |
| Case/Package | TO-3 |
| Polarity | NPN |
| Power Dissipation | 200 W |
| Breakdown Voltage (Collector to Emitter) | 120 V |
| Continuous Collector Current | 30A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
● High DC current gain
● Collector-base voltage (Vcbo = 120V)
● Emitter-base voltage (Vcbo = 5V)
ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
6 Pages / 0.25 MByte
ON Semiconductor
4 Pages / 0.1 MByte
ON Semiconductor
1 Pages / 0.16 MByte
Multicomp
Trans Darlington NPN 120V 30A 200000mW 3Pin(2+Tab) TO-3
Mospec
POWER TRANSISTORS(30A,60-120V,200W)
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