| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -120 V |
| Current Rating | -30.0 A |
| Case/Package | TO-3 |
| Polarity | PNP, P-Channel |
| Power Dissipation | 200 W |
| Breakdown Voltage (Collector to Emitter) | -120 V |
| Continuous Collector Current | 30A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.
● Collector to emitter voltage (Vce) of -120V
● Collector current (Ic) of -30A
● Power dissipation of 200W
● Operating junction temperature range from -55°C to 200°C
● Collector emitter breakdown Voltage of -120V
● Collector emitter saturation voltage of -3V at 20A collector current
ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
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ON Semiconductor
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ON Semiconductor
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Multicomp
Bipolar (BJT) Single Transistor, PNP, 120V, 4MHz, 200W, 30A, 1000 hFE
NJS
Trans Darlington PNP 120V 30A 3Pin(2+Tab) TO-3 Sleeve
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