| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 750 mA |
| Case/Package | SOT-23 |
| Drain to Source Resistance (on) (Rds) | 90.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 400 mW |
| Input Capacitance | 125 pF |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 750 mA |
| Rise Time | 1.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The MGSF1N02LT1G is a N-channel miniature surface-mount Power MOSFET with low RDS (ON) assure minimal power loss and conserve energy. The device is ideal for use in space sensitive power management circuitry. It is suitable for DC-to-DC converters, power management in portable and battery-powered products such as printers, PCMCIA cards, cellular and cordless telephones.
● Low RDS (ON) provides higher efficiency and extends battery life
● Miniature surface-mount package saves board space
● -55 to 150°C Operating temperature range
ON Semiconductor
4 Pages / 0.1 MByte
ON Semiconductor
5 Pages / 0.2 MByte
ON Semiconductor
4 Pages / 0.15 MByte
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5 Pages / 0.31 MByte
ON Semiconductor
1 Pages / 0.15 MByte
ON Semiconductor
Trans MOSFET N-CH 20V 0.75A 3Pin SOT-23 T/R
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