| TYPE | DESCRIPTION |
|---|
| Case/Package | Case M-250 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
The most common usage for this LET9060F RF MOSTFET from STMicroelectronics is in this power amplification mode. Its maximum power dissipation is 130000 mW. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. Its maximum frequency is 1000 MHz.
ST Microelectronics
9 Pages / 0.15 MByte
ST Microelectronics
RF MOSFET Transistors RF PWR Trans LdmoST N-Ch 28V 1GHz ESD
ST Microelectronics
Trans RF MOSFET N-CH 80V 12A 3Pin Case M-243
ST Microelectronics
RF MOSFET Transistors RF PWR Trans LdmoST N-Ch 28V 1GHz ESD
ST Microelectronics
RF MOSFET Transistors RF Power LdmoST 60W 18dB 945MHz
ST Microelectronics
RF MOSFET Transistors RF PWR Trans LdmoST N-Ch 28V 1GHz ESD
ST Microelectronics
RF MOSFET Transistors RF PWR Trans LdmoST N-Ch 28V 1GHz ESD
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