| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SO |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
Description
●The L6387E is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
●Features
●■ High voltage rail up to 600V
●■ dV/dt immunity ±50V/nsec in full temperature range
●■ Driver current capability:
●– 400mA source,
●– 650mA sink
●■ Switching times 50/30 nsec rise/fall with 1nF load
●■ CMOS/TTL Schmitt trigger inputs with hysteresis and pull down
●■ Internal bootstrap diode
●■ Outputs in phase with inputs
●■ Interlocking function
ST Microelectronics
17 Pages / 0.36 MByte
ST Microelectronics
MOSFET DRVR 600V 0.65A 2Out Hi/Lo Side Non-Inv 8Pin SO N T/R
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